pj2n5401 pnp epitaxial silicon transistors 1-3 2002/01.rev.a amplifier transisto r collector-base voltage: v ceo =120v collector dissipation pc=0.625w(tc=25 ) characteristic symbol test condition min typ max unit collector-base breakdown voltage collector- emitter brea kdown voltage emitter-base brea kdown voltage collector cutoff current emitter cutoff current dc current gain collector-emitter saturation voltage base-emitter saturation voltage output capacitance current gain-bandwidth product noise figure bv cbo bv ceo bv ebo i cbo i ebo h ef1 h ef2 h ef3 v ce(sat) v be(sat) cob f t nf ic=100 a,i e =0 ic=1ma,i b =0 i e =10 a,i c =0 v cb =200v,i e =0 v eb =3v,ic=0 v ce =10v,i c =1 ma v ce =10v,i c =10ma v ce =10v,i c =50ma ic=10 ma,i b =1 ma ic=50 ma,i b =5 ma ic=10 ma,i b =1 ma ic=50 ma,i b =5 ma v cb =20v,i e =0, f=1mhz v ce =5v,ic=10ma v ce =5v,i c =0.2 ma rs=1k,f=10khz 130 120 5 30 40 40 100 100 50 0.2 0.5 1 1 6 400 8 v v v na na v v v v pf mhz db pulse test: pulse width 300 s, duty cycle 2%. characteristic symbol rating unit collector-base voltage collector-emitter voltage emitter-base voltage collector current (dc) * collector dissipation junction temperature storage t emperature v cbo v ceo v ebo i c p c t j tstg 130 120 5 0.6 0.625 150 -55~150 v v v a w device operating temperature package PJ2N5401CT -20 +85 to-92 to-92 absolute maximum ratings (t a = 25 ) electrical characteristics (t a=25 ) ordering information pin : 1. emitter 2. base 3. collector
pj2n5401 pnp epitaxial silicon transistors 2-3 2002/01.rev.a dc current gain current gain-bandwidth product output capacitance base-emitter on voltage base-emitter sat uration voltage collector-emitter sat uranion voltage
pj2n5401 pnp epitaxial silicon transistors 3-3 2002/01.rev.a
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